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Consider a silicon sample at T = 300 K, with a uniform donor density N d = 5 × 10 16 cm -3 illuminated uniformly such that the optical generation rate is G opt = 1.5 × 10 20 cm -3 s -1 throughout the sample. The incident radiation is turned off at t = 0. Assume low-level injection to be valid and ignore surface effects. The carrier lifetimes are τ p0 = 0.1 µs and τ n0 = 0.5 µs. The hole concentration at t = 0 and the hole concentration at t = 0.3 µs, respectively, are