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Metallurgical Engineering
Physics Of Metals In Metallurgy
Difficulty: Medium
Silicon is doped with arsenic (concentration 10 20 atoms.m -3 ). At room temperature, the electron and hole mobilities in Si are 0.14 m 2 .v -1 .s -1 and 0.05 m 2 v -1 .s -1 respectively. The conductivity in (Ωm) -1 , at room temperature for Si doped with As is
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